40-V power MOSFETs with low RDS(On) and deliver high power .
Nexperia’s 40-V power MOSFETs in the LFPAK88 package delivers more than 50 times greater power densities. Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Recently Nexperia has introduced new MOSFETS in the LFPAK88 package which has the lowest drain to source resistance ( R DS(on) ) 0.55 mΩ , 40-V power MOSFETs in the high-reliability LFPAK88 package for automotive and industrial applications. These devices are the lowest R DS(on) 40-V parts that Nexperia has produced . Nexperia claims these devices offer power densities more than 50 times greater than traditional D2PAK devices as well as improved performance in both Avalanche and Linear mode for higher reliability and increased ruggedness. The company attributes the performance increases to a combination of the latest high performance superjunction silicon technology wit...