40-V power MOSFETs with low RDS(On) and deliver high power .
Nexperia’s 40-V power MOSFETs in the LFPAK88 package delivers more than 50 times greater power densities.
Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.
Recently Nexperia has introduced new MOSFETS in the LFPAK88 package which has the lowest drain to source resistance (RDS(on)) 0.55 mΩ , 40-V power MOSFETs in the high-reliability LFPAK88 package for automotive and industrial applications. These devices are the lowest RDS(on) 40-V parts that Nexperia has produced.
Nexperia claims these devices offer power densities more than 50 times greater than traditional D2PAK devices as well as improved performance in both Avalanche and Linear mode for higher reliability and increased ruggedness. The company attributes the performance increases to a combination of the latest high performance superjunction silicon technology with its LFPAK copper clip technology, which enables them to use more silicon in the package.
Nexperia said these figures are 1.5 to 2 times better than the competition and offer the best single pulse avalanche rating (EAS) at 2.3 J and very strong ID current rating of 500 A, which is a measured rather than theoretical limit. 500A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.
Together, these performance and size advantages enable designers to replace two paralleled old-style components with one new LFPAK88.
The AEC-Q101-qualified automotive (BUK7S0R5-40H) parts target automotive applications including
1.braking.2.power steering.3.reverse battery protection.4.e-fuse.5.DC/DC converter.6.motor control applications..
The industrial (PSMNR55-40SSH) MOSFETs suit applications for
1.battery isolation2.current limitation3.e-fuse4.motor control5.synchronous rectification6.load switch
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